Full-time

Senior Staff MOCVD Development Engineer

Posted by Renesas Electronics • Goleta, California, United States

📍 Goleta, California 🕒 February 26, 2026

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About the Role

Job Description
The Senior Staff MOCVD Development Engineer will lead process and hardware development for GaN-based epitaxial growth on silicon and sapphire substrates, enabling next-generation power devices. This role emphasizes deep technical understanding of MOCVD reactor behavior, GaN heterostructure engineering, and epitaxial integration for p-GaN and e-mode (enhancement-mode) device architectures. The ideal candidate combines strong experimental rigor, demonstrated materials expertise, and cross-functional leadership to translate research concepts into production-capable processes.
Responsibilities: 
Develop, optimize, and transfer MOCVD epitaxial processes for GaN-on-Si and GaN-onSapphire wafers, focusing on high-performance device layers targeting e-mode (p-GaN gate) and HEMT applications.
Design and execute development roadmaps for buffer structure engineering, strain management, and defect reduction to achieve target breakdown voltages...
                

Job Details

Location Goleta, California
Job Type Full-time
Category Engineers
Posted February 26, 2026
Deadline April 07, 2026

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